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AFT09S282Nr3 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 80 watt rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 720 to 960 mhz. ? typical single--carrier w--cdma performance: v dd =28volts, i dq = 1400 ma, p out = 80 watts avg., input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 920 mhz 20.0 35.9 6.3 --38.0 -- 1 4 940 mhz 20.1 36.2 6.2 --37.6 -- 1 8 960 mhz 20.0 36.1 6.1 --37.5 -- 1 7 features ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? in tape and reel. r3 suffix = 250 units, 32 mm tape width, 13 inch reel. document number: AFT09S282N rev. 0, 10/2012 freescale semiconductor technical data 720--960 mhz, 80 w avg., 28 v AFT09S282Nr3 figure 1. pin connections (top view) rf out /v ds 21 rf in /v gs o m -- 7 8 0 -- 2 plastic ? freescale semiconductor, inc., 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. AFT09S282Nr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +70 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature range t c --40 to +150 c operating junction temperature range (1,2) t j --40 to +225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 80 w cw, 28 vdc, i dq = 1500 ma, 960 mhz case temperature 91 c, 282 w cw, 28 vdc, i dq = 1500 ma, 960 mhz r jc 0.31 0.27 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 370 adc) v gs(th) 1.0 1.5 2.0 vdc gate quiescent voltage (v dd =28vdc,i d = 1400 ma, measured in functional test) v gs(q) 1.7 2.2 2.7 vdc drain--source on--voltage (v gs =10vdc,i d =3.6adc) v ds(on) 0.1 0.14 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. (continued)
AFT09S282Nr3 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, p out = 80 w avg., f = 960 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 19.0 20.0 22.0 db drain efficiency d 33.5 36.1 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.6 6.1 ? db adjacent channel power ratio acpr ? --37.5 --36.0 dbc input return loss irl ? -- 1 7 -- 1 0 db load mismatch (in freescale test fixture, 50 ohm system) i dq = 1400 ma, f = 940 mhz vswr 10:1 at 32 vdc, 416 w cw output power (3 db input overdrive from 280 w cw rated power) no device degradation typical performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, 920--960 mhz bandwidth p out @ 1 db compression point, cw p1db ? 280 ? w vbw resonance point (imd third order intermodulation inflection point) vbw res ? 60 ? mhz gain flatness in 40 mhz bandwidth @ p out =80wavg. g f ? 0.1 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.0156 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.006 ? db/ c 1. part internally matched both on input and output.
4 rf device data freescale semiconductor, inc. AFT09S282Nr3 figure 2. AFT09S282Nr3 test circuit component layout AFT09S282N rev. 0 cut out area c3 c4 c8 c8 r1 c2 c5 c1 c6 c7 r2 c18 c19 c23 c22 c13 c12 c11 c10 c20 c21 c24 c26* c16 c17 c15 c14 c25 *c26 is mounted vertically. c9 table 6. AFT09S282Nr3 test circuit component designations and values part description part number manufacturer c1 62 pf chip capacitor atc100b620jt500xt atc c2, c5, c10, c13 4.7 pf chip capacitors atc600f4r7bt250xt atc c3, c7, c14, c15, c22, c23 10 f chip capacitors grm32er71h106ka12l murata c4, c6, c16, c17, c18, c19 47 pf chip capacitors atc600f470jt250xt atc c8, c9, c11, c24 3.9 pf chip capacitors atc600f3r9bt250xt atc c12, c20, c21 2.4 pf chip capacitors atc600f2r4bt250xt atc c25 470 f, 63 v electrolytic capacitor mcgpr63v477m13x26-rh multicomp c26 36 pf chip capacitor atc100b360jt500xt atc r1, r2 6.04 ? , 1/4 w chip resistor crcw12066r04fkea vishay pcb 0.020 , r =3.5 ro4350 rogers
AFT09S282Nr3 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) 820 acpr f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 80 watts avg. -- 2 0 -- 0 -- 5 -- 1 0 -- 1 5 13 23 22 21 -- 4 2 38 34 30 26 -- 3 7 -- 3 8 -- 3 9 -- 4 0 d , drain efficiency (%) d g ps , power gain (db) 20 19 18 17 16 15 14 840 860 880 900 920 940 960 980 22 -- 4 1 -- 2 5 acpr (dbc) parc v dd =28vdc,p out =80w(avg.) i dq = 1400 ma, single--carrier w--cdma figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im5--u im5--l im7--l im7--u v dd =28vdc,p out = 320 w (pep), i dq = 1400 ma two--tone measurements, (f1 + f2)/2 = center frequency of 940 mhz figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) -- 1 -- 3 70 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 50 90 110 150 20 50 45 40 35 30 25 d , drain efficiency (%) --3 db = 132 w 130 d acpr parc acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 22 g ps , power gain (db) 21 20 19 18 17 16 g ps -- 1 d b = 6 7 w -- 2 d b = 9 5 w irl parc (db) -- 1 . 8 -- 1 -- 1 . 2 -- 1 . 4 -- 1 . 6 -- 2 -- 5 g ps 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probabilit y on ccdf im3--l 1 v dd =28vdc,i dq = 1400 ma, f = 940 mhz single--carrier w--cdma 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probabilit y on ccdf
6 rf device data freescale semiconductor, inc. AFT09S282Nr3 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 16 22 0 60 50 40 30 20 d , drain efficiency (%) d g ps , power gain (db) 21 20 10 100 300 10 -- 6 0 acpr (dbc) 19 18 17 0 -- 3 0 -- 4 0 -- 5 0 figure 7. broadband frequency response 11 23 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1400 ma 19 17 15 gain (db) 21 13 700 800 900 1000 1100 1200 1300 1400 1500 -- 4 0 20 10 0 -- 1 0 -- 2 0 irl (db) -- 3 0 gain 960 mhz v dd =28vdc,i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probabilit y on ccdf 940 mhz 920 mhz 960 mhz 940 mhz 920 mhz 960 mhz 940 mhz 920 mhz irl
AFT09S282Nr3 7 rf device data freescale semiconductor, inc. v dd =28vdc,i dq = 1400 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) z load (1) ( ? ) max linear gain (db) max output power p1db p3db (dbm) (w) d (%) am/pm ( ) (dbm) (w) d (%) am/pm ( ) 920 1.83 - j3.18 1.66 + j3.17 4.55 - j3.27 18.7 56.0 396 53.5 -8.0 56.9 494 58.2 -12 940 2.01 - j3.27 2.03 + j3.31 4.97 - j2.86 18.7 55.9 391 54.4 -7.7 56.9 490 57.6 -11 960 2.64 - j3.34 2.55 + j3.45 5.77 - j1.78 18.4 55.9 391 53.9 -7.9 56.9 488 57.8 -12 (1) load impedance for optimum p1db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit figure 8. load pull performance ? maximum p1db tuning v dd =28vdc,i dq = 1400 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) z load (1) ( ? ) max linear gain (db) max drain efficiency p1db p3db (dbm) (w) d (%) am/pm ( ) (dbm) (w) d (%) am/pm ( ) 920 1.83 - j3.18 1.70 + j3.02 1.49 - j1.61 22.0 53.5 225 66.2 -15 54.3 267 69.6 -22 940 2.01 - j3.27 2.12 + j3.16 1.48 - j1.80 22.0 53.3 215 66.6 -16 54.0 248 70.1 -24 960 2.64 - j3.34 2.66 + j3.26 1.76 - j1.79 21.7 53.6 230 67.4 -15 54.3 269 70.6 -22 (1) load impedance for optimum p1db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit figure 9. load pull performance ? maximum drain efficiency tuning
8 rf device data freescale semiconductor, inc. AFT09S282Nr3 p1db -- typical load pull contours ? 940 mhz 345 067 2 1 345 067 2 1 -- 4 . 5 0 -- 0 . 5 -- 1 . 5 -- 1 -- 2 -- 2 . 5 -- 3 . 5 -- 4 -- 3 -- 4 . 5 0 -- 0 . 5 -- 1 . 5 -- 1 -- 2 -- 2 . 5 -- 3 . 5 -- 4 -- 3 -- 4 . 5 0 -- 0 . 5 -- 1 . 5 -- 1 -- 2 -- 2 . 5 -- 3 . 5 -- 4 -- 3 imaginary ( ? ) imaginary ( ? ) 18 18.5 note: = maximum output power = maximum drain efficiency p e figure 10. p1db load pull output power contours (dbm) -- 4 . 5 real ( ? ) 0 -- 0 . 5 -- 1 . 5 imaginary ( ? ) 345 0 figure 11. p1db load pull efficiency contours (%) real ( ? ) imaginary ( ? ) figure 12. p1db load pull gain contours (db) real ( ? ) figure 13. p1db load pull am/pm contours ( ) real ( ? ) -- 1 p e 55 -- 2 -- 2 . 5 -- 3 . 5 -- 4 67 -- 3 2 1 51.5 53 53.5 50 52 54 56 58 60 62 64 66 52.5 52 18.5 19 19.5 20 20.5 21 21.5 22 345 067 2 1 -- 8 -- 1 0 -- 1 6 -- 1 8 -- 2 0 power gain drain efficiency linearity output power p e p e p e 54.5 54 -- 2 2 -- 2 4 55.5 -- 1 2 -- 1 4
AFT09S282Nr3 9 rf device data freescale semiconductor, inc. p3db -- typical load pull contours ? 940 mhz note: = maximum output power = maximum drain efficiency p e figure 14. p3db load pull output power contours (dbm) -- 4 1 real ( ? ) -- 1 -- 2 imaginary ( ? ) 0 1456 07 figure 15. p3db load pull efficiency contours (%) real ( ? ) figure 16. p3db load pull gain contours (db) real ( ? ) figure 17. p3db load pull am/pm contours ( ) real ( ? ) power gain drain efficiency linearity output power -- 3 p e 52 16 3 2 -- 4 1 -- 1 -- 2 0 1456 07 -- 3 p e 3 2 -- 4 1 -- 1 -- 2 imaginary ( ? ) 0 1456 07 -- 3 p 56 56.5 e 3 2 -- 4 1 -- 1 -- 2 imaginary ( ? ) 0 1456 07 -- 3 p e 3 2 -- 4 1 -- 1 -- 2 imaginary ( ? ) 0 1456 07 -- 3 p -- 1 0 e 3 2 52.5 53 53.5 54 54.5 54 56 58 60 62 64 66 68 16.5 17 18 18.5 19 20 -- 1 4 -- 8 -- 6 imaginary ( ? ) 55.5 55 17.5 19.5 -- 1 2 -- 1 6 -- 1 8 -- 2 0 -- 2 2
10 rf device data freescale semiconductor, inc. AFT09S282Nr3 package dimensions
AFT09S282Nr3 11 rf device data freescale semiconductor, inc.
12 rf device data freescale semiconductor, inc. AFT09S282Nr3
AFT09S282Nr3 13 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 oct. 2012 ? initial release of data sheet
14 rf device data freescale semiconductor, inc. AFT09S282Nr3 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2012 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: AFT09S282N rev. 0, 10/2012

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